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Re: Do the LNA need the ESD?

时间:04-11 整理:3721RD 点击:
Is there other pratical proven solution? Is the right one most commonly used?

In fact you can use both, if you use R then use not so high value (use simulations). the one with added diodes in series, you have to make sure the diodes are sized correctly. but why not add a dc-blcokcap? for what process tech is this ?
another simpler way is to make your npn bigger with some additional layotu changes to make it self protecting.
hope this helps.
oxy

yolande_yj wrote:

The right one is most commonly used. For SiGe process, it is always used.

The main drawback is the leakage problem from 3 series diodes.

Yibin.

The process is SiGe. If DC block is integrated, it requires a large chip area and degrades NF I think. Do you think so?

Added after 3 minutes:

Leakage? AC or DC? under what condition? can you elaborate? Thanks.

Why not add a small value capacitor to Ground ?

what do you mean?

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