VCO,Packaging model and ESD [help]

Hi all,

Please see the attachment, Lg means the packaing's parasitic inductor(e.g.,~2nH in 128pin QFP) and Cp means ESD and bond pad's parasitic capacitor(e.g.,~3pF). It means that this LgCp tank's resonance frequency is about 2GHz.

Unfortunately, the frequency of my signal Vs is just about 2GHz(it is a VCO signal and vary from 1.8GHz to 2.2GHz). Even when Vs's peak-to-peak voltage value is 0.4v, the simulation shows that the voltage at node 2(i.e. the gate of M1) is about 10v(my vdd is 2.5v). It will make the M1 breakdown!

How to solve this problem? Would you please give me any advice?

Thanks very much.

put two small diodes close to gate - clamp the gate.. there was a paper recently on this, like plasma diodes..
hope this helps
oxy