half node速度/时序问题

有没人关注过half node 的速度，时序?看到TSMC的介绍，相对于0.13，NMOS/PMOS 在0.11饱和电流更大，速度更快。相同的STD时序也和0.13类似。
这个结果怎么解释?
跪求各位高手解答。

你说的“相对于0.13，NMOS/PMOS 在0.11饱和电流更大，速度更快，”是因为110nm比130nm的沟道短，器件延时也短吗?

Half node process is directly shrinked from full node process, and the device geometry and wires are also shrinked. Smaller channel length means smaller threshould (most cases) and larger driving current, and further more wire length also speed up. But W has less impact on Vth than L and the driving current is linear with W, and thus half node always provide better performance.

谢谢小编啊，学习了