tt ff ss snfp和fnsp各代表什么工艺模型
嗯，好像懂了！
j& x: ?
一般是第一个字母代表nmos，第二个字母代表pmos
t代表typical
s代表slow（电流小）
f代表fast（电流大）9 s7 Y:
比如说tt表示nmos和pmos都是typical型
ss表示nmos和pmos都是slow型
ff当然类似了nmos和pmos都是fast型
snfp是slow nmos和fast pmos
这里是指几种工艺模型，不知这样理解合理不合理，望路过的指正！
楼上正解！
希望是正确的！呵呵！我也不懂！刚开始学！
做DC的时候有说过tt ff一个是最优模型，一个是最差模型
学习了！
小编正解
楼上正解！
本帖对我有用！
学习了
thnak you
不错，学习了。
学习了 嗯 谢谢
Types of cornersOne naming convention for process corners is to use two-letter designators, where the first letter refers to the N-channel MOSFET (NMOS) corner, and the second letter refers to the P channel (PMOS) corner. In this naming convention, three corners exist: typical, fast and slow. Fast and slow corners exhibit carrier mobilities that are higher and lower than normal, respectively. For example, a corner designated as FS denotes fast NFETs and slow PFETs.
There are therefore five possible corners: typical-typical (TT) (not really a corner of an n vs. p mobility graph, but called a corner, anyway), fast-fast (FF), slow-slow (SS), fast-slow (FS), and slow-fast (SF). The first three corners (TT, FF, SS) are called even corners, because both types of devices are affected evenly, and generally do not adversely affect the logical correctness of the circuit. The resulting devices can function at slower or faster clock frequencies, and are often binned as such. The last two corners (FS, SF) are called "skewed" corners, and are cause for concern. This is because one type of FET will switch much faster than the other, and this form of imbalanced switching can cause one edge of the output to have much less slew than the other edge. Latching devices may then record incorrect values in the logic chain.
In addition to the FETs themselves, there are more on-chip variation (OCV) effects that manifest themselves at smaller technology nodes. These include process, voltage and temperature (PVT) variation effects on on-chip interconnect, as well as via structures.
摘自wiki
FF and SS 不是指的电流的大小 指的是Carrier mobility 希望大家注意
好多好帖子，我喜欢
2楼正解
知道了，详细讲解
少了溫度的選項,~
说的对
好喜欢14楼的回答