微波EDA网,见证研发工程师的成长!
首页 > 研发问答 > 微波和射频技术 > 天线设计和射频技术 > Query about pinch-off point for GaAs FET in ADS

Query about pinch-off point for GaAs FET in ADS

时间:04-11 整理:3721RD 点击:
I have a question on how to determine the pinch-off point for a GaAS FET in the simulation in ADS.If the Vds was set to zero bias,what will Vgs be in order to set in order to be less than the pinch-off voltage.THks a million........

Hi,

I think you shouldn't put Vds to 0, try with some other value, half of Vds brake down voltage would be usual. Then make gate voltage as negative as it takes to have drain current fall to 1mA. This would be app value for pinch-off.

flyhigh

try to simulate over a certain Vgs range to find out this point.

So the pinch-off voltage for a GaAS FET remains the same even if the VDS changes? IS the pinch-off voltage at the point when the Ids current rises from zero when it is plotted against VGS?

I plot Id vs. VGs with various Vds. I use the Vgs where Ids takes off as my pinch-off voltage. That all I can think of. Any more idea?

上一篇:printed yagi dipole
下一篇:最后一页

Copyright © 2017-2020 微波EDA网 版权所有

网站地图

Top