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ads momentum inductor simulation

时间:04-10 整理:3721RD 点击:
Deaar All :
Does anyone know how to use ADS momentum to simulation the chip inductor ?
The design flow , Thanks

if you make your layout in cadence environment, then you can export your layout to gdsII format and import it in Momentum. you have to enter in momentum your technology parameters (number of metals, metal and oxide thickness, substrate conductivity etc.) in "Create Substrate" option. depending on the type of your inductor (differential, single-ended) you have to attach ports to the ends of your inductor and make s-parameter simulations (include also 0 Hz). the simulation duration depends on the number of metal layers (more layers -> longer simulation). from the s-parameters you can generate a model or directly use the s-parameters in your circuit.

To generate a lumped component circuit model from the S-parameter data, there is a tool in ADS called "SPICE Model Generator". Locate that tool, and the menus forms within the tool are self-explanatory. A simple PI-model is probably what you would want to try first.

Here is a handy webpage to give an initial estimate of the realized inductance of a spiral planar inductor: http://smirc.stanford.edu/spiralCalc.html

I use the equations from the reference given for this calculator to give me a quick indication of the needed size of my inductors.

Dear estradasphere :

If our inductor is um metal 8 then n-well , Do i still need to creat the other layer
like m7~m1 and via7~contact. From the ADS monemtum, I don't find any doc about this. Does you have any example , a like actually flow about IC design.


Sincerely, Mitchell

See the fold you installed ADS and find doc\pdf\mom.pdf. It tells something.

if you use e.g. only metal 8 then you don't have to enter the rest of your metal layers (metal 1, 2 and so on). but i think, you need at least one additional metal layer besides metal 8, such as metal 7, to connect your second port to the circuit. finally, you have to enter the correct distance from the metal layer down to the substrate (SiO2, oxide).

hope this helps

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