LNA collector shunt stabilization

Does anyone know how to compute/ calculate the "new" K value and "new" S-parameters after determining the collector transistor shunt resistance needed for transistor stabilization. I have failed to find any literature stating clearly how the calculation is done if one already knows the resistance value.

You can represent your transistor with [Y] parameters with a simplified model (for example only gm)
for the model see:

http://www.uwaverf.altervista.org/in...d=53&Itemid=59

than you can represent the impedance that is connected to the device in [Y] parameters if the impedance is connected in parallel or [Z] if in series connection. After this you can transform all in [S] parameters.

For example if the device is represented in [Y] and the impedance is in series at the collector dynamically will be in parallel by respect to the collector so the impedance can be modeled by a simply net with the impedance in shunt model. So you can do the sum of the two matrices.

see here for the representations:

http://www.uwaverf.altervista.org/in...d=51&Itemid=55

and

http://www.uwaverf.altervista.org/in...d=48&Itemid=53

Thank you this has been helpful! Are you saying that if I place a resistor in parallel with the collector of a transistor then the effective [Y] is simply the sum of [Y_transistor] + [Y_shunt resistor]?