微波EDA网,见证研发工程师的成长!
首页 > 研发问答 > 微波和射频技术 > 天线设计和射频技术 > How to understand RF amplifier parameters in NESG250134 datasheet

How to understand RF amplifier parameters in NESG250134 datasheet

时间:04-07 整理:3721RD 点击:
Hello,everybody,

I am just reading NESG250134 datasheet and meet a problem:
"IC (set) = 30 mA (RF OFF)" in Page3, what does it mean exactly?

Sorry for no attachment since i can't attached it at present
Thanks in advance.

Ic set to a specific value when RF is OFF is the bias quiescent current of the transistor (Icq), to be able getting the linear gain of the amplifier when the RF is ON.
In this situation the RF input shouldn't be greater than a specific value, otherwise the transistor goes in the saturation and the amplification is not linear anymore.

Thanks vfone.

But I still don't understand. in datasheet shows " VCE = 3.6 V, IC (set) = 30 mA (RF OFF),f = 460 MHz, Pin = 0 dBm". if RF OFF, why is there pin=0dBm? please see the attached:paras_1.
how to explain IC(set)=30mA in VCE ~IC curve? also what is the relationship between IC(about 500mA) and Icq(30mA).

This time I have attached the datasheet here. Thanks

So, first set IC to 30mA with RF OFF, and after that turn the RF ON having power equal with 0dBm (or less).

Thanks vfone again.
After re-reading datasheet and your replies, I have more understanding about these parameters in datasheet. Also there are some other questions need to understand, I will study more.

Copyright © 2017-2020 微波EDA网 版权所有

网站地图

Top