请教NAND Flash读原理
时间：12-12
整理：3721RD
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请教各位一下，如附件中的图：
To read a NAND flash cell, the selected wordlines are grounded and 4.5V are applied to the
unselected wordlines to open slightly the transistors so that they act as pass transistors. A bias
is applied to the bitlines and if there is no charge stored in the cell, current will flow through the
pass transistors along the string. If charge is stored in the cell, there will be no current flow.
Selected Wordline = 0V的时候，Transistor应该是不道通的，Floating Gate中无论是否有电子都不会道通啊。。。没想明白，请各位指教。
To read a NAND flash cell, the selected wordlines are grounded and 4.5V are applied to the
unselected wordlines to open slightly the transistors so that they act as pass transistors. A bias
is applied to the bitlines and if there is no charge stored in the cell, current will flow through the
pass transistors along the string. If charge is stored in the cell, there will be no current flow.
Selected Wordline = 0V的时候，Transistor应该是不道通的，Floating Gate中无论是否有电子都不会道通啊。。。没想明白，请各位指教。
floating gate 净电荷为正，VT小于0，就可以导通了。
Floating Gate应该Trap了一些带电子在里面，为什么说净电荷为正呢？
我想知道国内哪些公司做的东西需要看这么细，这么底层的东西
国内厂家有做nand flash的吗？
BL是负0.8V吧
这样浮栅上有电荷的话阈值增加，不够导通
没有电荷的话刚好达到阈值，可以开启
Flash的编程和擦写物理机制有很多，Flash Gate上是可以俘获正电荷（空穴）导致Vt<0的