SOS
时间：04-12
整理：3721RD
点击：
1) D.Zoschg,W.Wilhelm, "2dB noise figure,10.5GHz LNA using SiGe bipolar technilogy" , Electronics letters, Decmber 1999.
2) U.Erben, A.Schumacher, "Application of SiGe heterojuncion bipolar transistor in 5.8 and 10GHz low-noise amplifiers", Electronics letters, July 1998.
3) H.Ainspan, "A 6.25GHz low DC Power low-noise amplifier in SiGe,"
IEEE Custom Integrated Circuits Conference,vol.pp.177-180,1997.
4)J.RLong,"RF Analog and Digital Circuits in SiGe technology," IEEE International Solid-State Circuits Conference,vol.39,pp.52-54,February 1996.
5) D.Zoschg, W.Wilhelm, "Monolithic LNAs up to 10GHz in production-near 65Ghz fmax silicon bipolar technology", in 2000 IEEE Radio frequency integrated circuits symposium, Digest of Papers , pp.135-138, June 2000, MON4B-1.
6) Ono Masayoshi, Norihru Suematsu,"1.9GHz/5.8GHz-Band On-chip maeching si-MMIC low noise amplifiers Fabricated on High Resistive Si Substate",IEEE MTT-S Int. Microwave Symposium Digest, vol.2, pp.493-496, June 1999.
2) U.Erben, A.Schumacher, "Application of SiGe heterojuncion bipolar transistor in 5.8 and 10GHz low-noise amplifiers", Electronics letters, July 1998.
3) H.Ainspan, "A 6.25GHz low DC Power low-noise amplifier in SiGe,"
IEEE Custom Integrated Circuits Conference,vol.pp.177-180,1997.
4)J.RLong,"RF Analog and Digital Circuits in SiGe technology," IEEE International Solid-State Circuits Conference,vol.39,pp.52-54,February 1996.
5) D.Zoschg, W.Wilhelm, "Monolithic LNAs up to 10GHz in production-near 65Ghz fmax silicon bipolar technology", in 2000 IEEE Radio frequency integrated circuits symposium, Digest of Papers , pp.135-138, June 2000, MON4B-1.
6) Ono Masayoshi, Norihru Suematsu,"1.9GHz/5.8GHz-Band On-chip maeching si-MMIC low noise amplifiers Fabricated on High Resistive Si Substate",IEEE MTT-S Int. Microwave Symposium Digest, vol.2, pp.493-496, June 1999.