About the gate resistance of a MOSFET
时间：04-11
整理：3721RD
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TSMC 0.18um RFCMOS in Cadence SpectreRF
in order to find the gate resistance of a MOSFET, I try to read the gate resistance from the Smith chart for S11.
I fixed the channel length to 0.18um, and fixed number of fingers to be 64.
Then I change the value of width per finger. ( the MOSFET is properly biased and the measure frequency is 2.5GHz)
According to my knowledge, the gate resistance increases with the width per finger, however, the simulator tells me it decreases from arround 14Ohm @ 1.5um per finger to 11 Ohm@8um per finger.
anyone could kindly tell me why?
Thank you in advance!
in order to find the gate resistance of a MOSFET, I try to read the gate resistance from the Smith chart for S11.
I fixed the channel length to 0.18um, and fixed number of fingers to be 64.
Then I change the value of width per finger. ( the MOSFET is properly biased and the measure frequency is 2.5GHz)
According to my knowledge, the gate resistance increases with the width per finger, however, the simulator tells me it decreases from arround 14Ohm @ 1.5um per finger to 11 Ohm@8um per finger.
anyone could kindly tell me why?
Thank you in advance!
is it due to the NQS effect? and the total resistance u seen is not the physical resistance alone?
I also have this doubt and wish some one could give the right answer
best regards
i think the NQS effect can be neglected under 5GHz
the gate resistance depends heavly on the layout of the fingers and the conncetion between them
khouly
Anyone has any source to study RF layout?