微波EDA网,见证研发工程师的成长!
首页 > 研发问答 > 微波和射频技术 > 天线设计和射频技术 > Angelogh model for power transistors.

Angelogh model for power transistors.

时间:04-08 整理:3721RD 点击:
Hi!.

I′ve received some simulations by Mitsubushi about RF+DC bias point swing. They say that they′ve used the Angelogh model.

Anybody has information about the Angelogh model?.

It should be "Angelov"..

it is explained in ADS doc folder
doc\ccnld\Angelov_Model_(Angelov_(Chalmers)_Nonlin ear_GaAsFET_Model).html

Thanks a lot!.
With the ADS help and refererences contained within, I can start my simulations.
It was quite suspicious not to find anything on the Internet about the model.

上一篇:Stability of LC oscillator
下一篇:最后一页

Copyright © 2017-2020 微波EDA网 版权所有

网站地图

Top