Transistor technology
时间：04-07
整理：3721RD
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Hi all,
I have a short question related to GaN transistor technologies. Some GaN suppliers report different breakdown voltages for their process assuming devices are operating in the same frequency band.
What is the main cause of this?
Is it more related to gate geometry or SiC capability?
I have a short question related to GaN transistor technologies. Some GaN suppliers report different breakdown voltages for their process assuming devices are operating in the same frequency band.
What is the main cause of this?
Is it more related to gate geometry or SiC capability?
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