Design of LNA using CMOS transistor

I want to design LNA using CMOS transistor, and am familiar with designing LNA using HEMT transistor. I have used Avago technologies ATF54143 s2p parameters to design and have simulated and fabricated.

Similarly which CMOS transistor will give less NF and more gain, which company CMOS transistor, I need to select and how to get s2p parameters for that company. Please guide me.

There is no such CMOS Transistor for LNAs.There were some discrete pHEMTs, BJTs once upon a time but all have gone..
Some Infineon BJTs and some other pHEMTs are still there but very limited.

In fact there is no "CMOS transistor" - there are NMOS and PMOS.
As a rule "RF guys" appear to prefer the zero-VT device for gm
and IDsat, relative to capacitances.

You can find canned NMOSFETs for lower frequency applications.
Anything over maybe 1GHz probably wants integrated transistors.
Kind of wasteful for a 1-transistor LNA (study project?).

The MOSFET is never the best "low noise" play. It's more about
the convenience of integration. MESFETs are an option. Probably
can find single GaAs FETs still, from Qorvo et al (whoever the old
TriQuint is, today). For integration on silicon, might look to SiGe
BJTs as well as very short channel MOS (BV vs fmax trades may
disappoint, but LNAs usually don't have really high input power
to worry about except as a protection problem). Nowhere do you
mention Pin, frequency band or desired supply voltage, so there
is not a lot anyone can do to recommend specifics.

Discretes vendors ought to provide SPICE and/or S-parameters
as applications support, find the device first and follow the thread.