最近转用ARM library没EndCap，怎么办？一定要加EndCap吗？
解决方法其实很简单，就是自己画一个，提lef，然后使用………
最好还是加一点，对芯片性能有好处
不是100%必要的东西
45nm 以下才加好吧，
以前我用的AMS 0.35um也有EndCap喔。
谢谢。本来我以为EndCap就是在VDD和GND之间的电容，起稳压作用，但下面的段落又不是这样说，这来自ARM SAGE standard cell data book。我尤其不清楚Twin-well, Triple-well和EndCap的关系，可否解释一下?
WELLANTENNA Cell
This process requires that, for any standard cell row with a device in it, the N-well must be tied down to the substrate
and triple-wells must be tied to the enclosing N-well. Any connection between the wells is usually sufficient. In a
triple-well design, the connection will happen automatically when you place the ENDCAP cells at the ends of the
standard cell rows. In triple-well and twin-well designs, any CMOS standard cell (such as an inverter) placed in a
standard cell row will also make the connection; however, in a twin-well design, if a pair of standard cell rows, sharing
an N-well, or a single standard cell row is populated by nothing but FILL cells and/or ANTENNA cells and at least
one FILLCAP cell, then the associated N-well will be in violation of the well antenna rule. In this scenario, the N-well
must be tied down to the substrate by inserting a WELLANTENNA cell into the standard cell row in violation.
我理解的和你类似，EndCap是在Special route 开始及结束的地方分别加Cap，以保证Special route在接入及接出的地方都经过了一定数量的电容，这样做有利于standard cell的稳定，以利于芯片的性能，ESD等。包括后面加filler的时候增加Decap电容我理解的也是这个意思。
Twin-well, Triple-well我不懂什么意思，请高手分析下~
WELLANTENNA Cell 是什么类型啊
well antenna rule是什么概念?根据解释这里添加的WELLANTENNA Cell和稳压没什么关系吧?
这个是要看STD供应商的吧，应该不是绝对要求的
仔细分析了一下这段话，个人觉得文档的意思是这样的：
当row 至少有一个带栅氧层的cell 时，必须插一个 WELLANTENNA，它将深N 阱接VDD，另一端接到psub，
所以个人觉得WELLANTENNA 应该是一个反偏二极管。