场氧是什么材料，是SIO2吗

大神顶一下啊

栅是多晶，晶元是单晶

SIO2不是 也可以做栅吗，

是sio2，但是和gate oxide 还是有差别
其实整个问题在半导体工艺的书上都会提及
不过我还是鹦鹉学舌一下
传统工艺中场氧是生长出来的，但是一般是湿氧法生长，生长速度快，致密性差
栅氧是干氧法生长出来，质量远优于场氧
现在比较先进的工艺都是STI隔离，场氧都是先挖槽，在回填sio2
栅氧也有可能是SiNO或者high-k材料或复合材料，不单是sio2

The Gate Insulator in modern process could be HfO2 or other High-K dielectrics.But usually in earlier processes the Gate Oxide is SiO2.This SiO2 is grown by dry oxidation process in a furnace.Dry Oxidation process gives very slow growth rate.Hence we can achieve thin oxide layers.Also dry oxidation provides superior Si to SiO2 interface without any dangling bonds or traps.Field Oxides and Trench isolation oxides are grown by wet oxidation.Wet oxidation gives rapid growth with low quality interface.But its good enough for isolation purpose.SiO2 or Si3N4 in BEOL layers are deposited by CVD or similar processes.

建议在栅字后面加个氧字，这样基本可以说得过去