开源TCAD Re: 对Synopsys的TCAD软件很无语
时间：12-12
整理：3721RD
点击：
http://gss-tcad.sourceforge.net/
好像是一个中国人开发的
你能不能用上不知道（我不懂器件）
如果能参与开发还是不错的：）
Introduction
GSS is a commercial quality TCAD software which enables two-dimensional numerical simulation of semiconductor device with well-known drift-diffusion and hydrodynamic method. The initial goal of GSS is to provide an efficient tool to calculate the semiconductor device response to the EMP (Electromagnetic Pulse). After two years' hard work, GSS has reached its stable version 0.4x. I published it for attracting more people work with this project.
Fig 1. NMOS transistor and the inner distribution of potential
GSS is an Open Sourced Free Software. The source code is available free of charge under the Free Software BSD license. The code is written in C++ with STL usage. Careful attention is paid to performance related issues.
The software has the following basic features:
GSS has Basic DDM (drift-diffusion method) solver, Lattice Temperature Corrected DDM solver and EBM (energy balance method) solver. The former 0.37 version has a full HDM (hydrodynamic method) solver.
The GSS program is directed via input statements by a user specified disk file.
Support triangle mesh generation and adaptive mesh refinement.
Employed PMI (physical model interface) to support various materials, including compound semiconductor materials such as SiGe and AlGaAs.
Support DC sweep, transient and AC sweep calculations. The device can be stimulated by voltage or current source(s).
Support IV curve automatically trace. (Experimental)
Support some advanced features such as high field mobility, impact ionization, band-band tunneling and so on.
Support device/circuit mixed simulation (with NGSPICE) via network since version 0.45.
2D and 3D plot capacity for post-process.
The examples will give you an image of what GSS can do.
好像是一个中国人开发的
你能不能用上不知道（我不懂器件）
如果能参与开发还是不错的：）
Introduction
GSS is a commercial quality TCAD software which enables two-dimensional numerical simulation of semiconductor device with well-known drift-diffusion and hydrodynamic method. The initial goal of GSS is to provide an efficient tool to calculate the semiconductor device response to the EMP (Electromagnetic Pulse). After two years' hard work, GSS has reached its stable version 0.4x. I published it for attracting more people work with this project.
Fig 1. NMOS transistor and the inner distribution of potential
GSS is an Open Sourced Free Software. The source code is available free of charge under the Free Software BSD license. The code is written in C++ with STL usage. Careful attention is paid to performance related issues.
The software has the following basic features:
GSS has Basic DDM (drift-diffusion method) solver, Lattice Temperature Corrected DDM solver and EBM (energy balance method) solver. The former 0.37 version has a full HDM (hydrodynamic method) solver.
The GSS program is directed via input statements by a user specified disk file.
Support triangle mesh generation and adaptive mesh refinement.
Employed PMI (physical model interface) to support various materials, including compound semiconductor materials such as SiGe and AlGaAs.
Support DC sweep, transient and AC sweep calculations. The device can be stimulated by voltage or current source(s).
Support IV curve automatically trace. (Experimental)
Support some advanced features such as high field mobility, impact ionization, band-band tunneling and so on.
Support device/circuit mixed simulation (with NGSPICE) via network since version 0.45.
2D and 3D plot capacity for post-process.
The examples will give you an image of what GSS can do.
三维的cogenda用起来是挺方便的，无奈卖得太贵；最近开始学习sentaurus.....