什么是 双逻辑 ？

DUALLOGIC, a top ranked project, is the "flagship of CMOS in FP7. The aim is to
develop a high mobility  dual-channel Front-End of Line technology as an option
for (sub)-22 nm high performance logic ICs. Unlike the present day devices
which are all made of Si, we propose that the active channel of pMOS and nMOS
transistors in future nanoelectronics could be made of different high mobility
semiconductor materials.  In particular, we propose that pMOS are made of Ge
and nMOS are made of III-V compound semiconductors co-integrated in the same
complex engineered substrate as shown in the Figure below.

For more information,please email hsinoic@hotmail.com