gate currents for pHEMT MMIC power amplifier at saturation?
时间：04-08
整理：3721RD
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Hi, everyone. Do you have any experiences about biasing the pHEMT MMIC power amplifier at saturation mode?
I just thought that the pHEMT is similar to depletion JFET or MESFET, which requires negative bias. So the gate currents should be a very small number. However, for the power amplifer, if it works at near saturation point for maximum PAE, someone told me the gate currents would sink or source a few mA.
I am wondering how it happens? Do you have any recommendation references for how to apply active bias for pHEMT? Thanks.
I just thought that the pHEMT is similar to depletion JFET or MESFET, which requires negative bias. So the gate currents should be a very small number. However, for the power amplifer, if it works at near saturation point for maximum PAE, someone told me the gate currents would sink or source a few mA.
I am wondering how it happens? Do you have any recommendation references for how to apply active bias for pHEMT? Thanks.
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