微波EDA网,见证研发工程师的成长!
首页 > 研发问答 > 微波和射频技术 > 天线设计和射频技术 > Absolute theoretical maximum output power of a PA stage

Absolute theoretical maximum output power of a PA stage

时间:04-04 整理:3721RD 点击:
Hi guys,

I'm designing a PA stage and would like to know how to determine what is the absolute theoretical maximum output power that I can get from the transistor into my load?



The transistor is part a submicron SiGe technology with a defined BV, ft, fmax and optimum current density. At first glance it depends of the maximum possible VCE across the transistor as well as the maximum current (I_max) that the transistor can hold, but this approach overlooks the operating frequency I guess, i.e. the transistor will not deliver the same output power at 10 GHz than at some frequency near its ft/fmax if I am correct?

Could someone provide maybe some insight into how to determine this? Some useful books/articles/references with some basic analysis would be really useful to me.

Many thanks in advance,

MK

Copyright © 2017-2020 微波EDA网 版权所有

网站地图

Top