High power RF in T.L.
时间：03-31
整理：3721RD
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Hello all!
Lately, I've encountered dealing with RF high power transmission lines (TL).
My question is, how once can predict the behavior of a TL when applying high power to it.
It is known that various EM simulation tools arrive with 1W at the exciation port.
Even if we will increase it - the S11 and the total EM pattern would stay same!
Is there a way for taking the high power transmission into acount in the modeling phase?
I would like to give an example about it.
If we will try to drive more than 400W (@ 1GHz e.g.) to an SMA connector it will foldback (the distance between the inner condctor and the outer conductor is too small).
But with in an N-Type connector it's OK (due to large distance between conductors - which means more breakdown voltage capability).
Please advise!
IH
Lately, I've encountered dealing with RF high power transmission lines (TL).
My question is, how once can predict the behavior of a TL when applying high power to it.
It is known that various EM simulation tools arrive with 1W at the exciation port.
Even if we will increase it - the S11 and the total EM pattern would stay same!
Is there a way for taking the high power transmission into acount in the modeling phase?
I would like to give an example about it.
If we will try to drive more than 400W (@ 1GHz e.g.) to an SMA connector it will foldback (the distance between the inner condctor and the outer conductor is too small).
But with in an N-Type connector it's OK (due to large distance between conductors - which means more breakdown voltage capability).
Please advise!
IH