HFSS Incident Wave and Voltage Optimization

I have draw a model of a FET with a silicon layer, bulk oxide, metal, etc. In addition, I have drawn wires which run to contact pads which connect to the source, drain, and gate of the FET. I have excited this model with an incident plane wave of say, 1 V/m.

I am trying to find a way to arrange the wires and contact pads in such a way that I get the largest voltage differential between the gate and source of the FET.

Can someone suggest a way to achieve this using HFSS?