n substrate

I am designing Spiral Inductor using HFSS.

I want the substrate to be P-type.

Can Any one help me as how to define the substrate as P-type in HFSS.

Thanks

KASI

I don't think you need to. All you care about is how many charge carriers there are, and it doesn't matter whether those charge carriers are in the form of electrons (n-type) or holes (p-type). If there were a junction between p-type and n-type it might be different, but in a spiral inductor there should be no such junctions. So just get the substrate conductivity right and forget about p-type vs n-type.

Thanks for the reply.

Actually I am doing thesis in designing the GSG test fixture for high isolation measurements.

In that I have plans of using different substrates p or n or combination of both.

Actually I want to confirm that do we have option of desigining the n-type or p-type using HFSS.

I am trying to design and simulate my different ideas.

Thanks
KASI

No, you don't have the option to define the silicon substrate as p-type or n-type. what you can do is to simulate your substrate in device simulator e.g. MEDICI and plot the concentration, hence, the resistivity, and then emulate this in your HFSS.