HeavyIon Model of Sentaurus TCAD
Heavy ions (N=1) are usually a trivial element of TID drifts.
In a ~1E6 p/cm2 beam shot you'd pick up sub-kRad dose.
You would never ever see a "heavy" ion fluence of that
order in space applications.
However microdose / microdisplacement damage are real
things when your transistor dimensions become on the order
of the damage track radius (depending as this does, on the
ion energy, Z and material). I've even seen skinny thin film
resistors drift, if you hit them hard and long enough.
But to the point at hand I don't use Sentaurus and I would
not trust somebody else's model of the track, collection
dynamics and least of all any charging related accuracy,
as this depends keenly on oxide attributes which cannot be
known (where it counts) without experimental loops before
the fact.
There are many, many, many papers on MOSFET radiation
response. Many, many reside behind the IEEE NPSS' pay
wall, but you often can find copies that have escaped into
the wild, by searching the quoted title string and lead
author (authors often keep copies on university servers).
ESA and JAXA and NASA have a lot of open literature.
Space market players like TI and Intersil (Renesas now)
have published many marketing and technical papers too.