求助：CMOS工艺流程Tsuprem程序
Tsuprem 4的使用手册里有个CMOS的例子的
thanks for sharing
thanks for sharing
顶一下
$ TMA TSUPREM-4 N-channel MOS application
$
$ 1. Identify the graphics driver
$ Default from DEFPDEV, TERM, or S4PCAP "default" entry used
$ 2. Beginning of the main loop
FOREACHLD( 3 5 )
$ 3. Specify the mesh
MESHGRID.FAC=1.5
MESHDY.SURF=0.01LY.SURF=0.04LY.ACTIV=2.0
$ 4. Initialize
INITIALIZE <100>BORON=1E15WIDTH=( 0.7 + ( LD / 10.0 ) ) DX=0.1
$ 5. Plot the initial mesh
SELECTTITLE="Mesh for Delta=0.@{LD}"
PLOT.2DSCALEGRIDY.MAX=3.0C.GRID=2
$ 6. Initial oxide pad
DEPOSITOXIDETHICKNESS=0.03
$ 7. P-well implant
IMPLANTBORONDOSE=1E12ENERGY=35
$ 8. Use a point defect models that simulates OED
METHODPD.TRANS
$ 9. P-well drive
DIFFUSETEMP=1100TIME=120DRYO2PRESS=0.02
$ 10. P-well doping profile
SELECTZ=LOG10(BORON)TITLE="Channel Doping (Delta=0.@{LD})"
PLOT.1DX.VALUE=0RIGHT=3.0BOTTOM=15TOP=19LINE.TYP=2COLOR=2
LABELX=1.8Y=18.5LABEL="After p-well drive"LINE.TYP=2C.LINE=2
$ 11. Pad nitride
DEPOSITNITRIDETHICKNESS=0.1
$ 12. Field implant and oxidation
IMPLANTBORONDOSE=5E13ENERGY=80
DIFFUSETEMP=1000TIME=360WETO2
$ 13. Etch to remove the pad
ETCHNITRIDEALL
$ 14. Vt adjust implant
IMPLANTBORONENERGY=100DOSE=1E12
$ 15. P-well doping profile
SELECTZ=LOG10(BORON)
PLOT.1DX.VALUE=0^AXES^CLEARCOLOR=2
LABELX=1.8Y=18.2LABEL="After Vt implant"LINE.TYP=1 C.LINE=2
$ 16. Print oxide and silicon thicknesses
SELECTZ=1
PRINT.1DX.VALUE=0.0LAYERS
$ 17. Etch oxide
ETCHOXIDETRAPTHICK=0.05
$ 18. Gate oxidation
DIFFUSETEMP=950TIME=30DRYO2
$ 19. Poly deposition
DEPOSITPOLYSILICONTHICKNESS=0.3divISIONS=4
$ 20. Poly and oxide etch between x = 0.0 and 0.5 microns
ETCHPOLYLEFTP1.X=0.5
ETCHOXIDETRAPTHICK=0.04
$ 21. Deposit a thin layer of oxide
DEPOSITOXIDETHICKNESS=0.02
$ 22. LDD implant
IMPLANTPHOSENERGY=50DOSE=5E13IMPL.TAB=PHOSPHORUS
$ 23. LTO
DEPOSITOXIDETHICK=0.2
$ 24. Establish a sidewall spacer
ETCHOXIDETRAPTHICK=0.22
$ 25. Source/drain implant
IMPLANTARSENICENERGY=100DOSE=2E15
$ 26. Oxide etch
ETCHOXIDELEFTP1.X=0.5
$ 27. Use an oxidation model that understands polysilicon
METHODCOMPRESS
$ 28. Source/drain reoxidation (including the polysilicon gate)
DIFFUSETEMP=900TIME=30DRYO2
$ 29. BPSG -- etch to open windows for aluminum contact
DEPOSITOXIDETHICK=0.3
ETCHOXIDELEFTP1.X=0.3
$ 30. Metallization -- etch to create a source contact
DEPOSITALUMINUMTHICK=0.5SPACES=3
DEPOSITPHOTORESIST THICK=1.0
ETCHPHOTORESIST RIGHTP1.X=0.6
ETCHALUMINUMTRAPANGLE=85THICK=0.8
ETCHPHOTORESIST ALL
$ 31. Reflect to form the complete structure; then save it
SAVEFILEOUT.FILE=S4EX7AS@LD
STRUCTUREREFLECTRIGHT
SAVEFILEOUT.FILE=S4EX7AP@LDMEDICI
savefile out.f=s4ex7a@{LD}.tif tif
$ 32. End of loop
END