如何通过doping来抑制产生复合中心？

问个器件方面的问题
经常可以看到通过在G/R center比较密集的区域加heavy doping来抑制这些中心
可能带来的问题,比如在光电器件表面的Si/SiO2,作p+ implant,来抑制表面态带
来的暗电流,效果很好
但是这背后的原理是什么呢?我大致知道是调整费米能级位置使G/R center充满
或者耗尽,这样他们就不在作为G/R中心出来捣乱,有没什么书或者paper讲的详细
系统点.大部分教材没具体讲这个,或者根本没有...
请帮我推荐点相关资料把,谢谢!

The dark current generation due to the interface defect is determined by the
trap properties, namely trap capture/emission time. These two parameters te
ll how fast the interface trap attract/release minority carriers, i.e. dark
current generation.
Changing doping concentration can efficiently adjust these time constants. e
.g, if we use p+ to protect the gate interface, we normally refer the traps
are filled by the holes. In fact, it is the trap emission time which is bein
g increased, which means it take a very long time for the trap to "release"
electrons in conduction band.