S12 MagniV应用案例：基于S12ZVM的电机控制方案

BLDC电机控制应用综合解决方案

概述

The S12ZVM family is part of the S12 MagniV portfolio of mixed-signal MCUs offering smart and optimized integration of high-voltage analog components. This new family is built upon LL18UHV technology that combines highly reliable 180 nm non-volatile memory along with the integration of high-voltage analog components on a single piece of silicon. These high-voltage analog components are capable of withstanding the rigorous requirements of the automotive environment, which can occur during load dump conditions. The S12ZVM product family integrates an automotive voltage regulator operating between 3.5 and 40 volts, a LIN physical layer and a gate drive unit made of three low-side and three high-side drivers to control up to six external MOSFETs.

图1.S12ZVML128：S12 MagniV混合信号微控制器

表1.产品对比表

主要特点：

S12Z core, 50 MHz bus 32 to 128 KB flash with ECC Up to 512 bytes EEPROM with ECC Built-in automotive voltage regulator operating between 3.5 and 40 V Handles very low cranking voltage as well as load dump situations with limited external components Built-in LIN physical layer meets automotive OEM specifications for LIN conformance and EMC requirements Built-in gate drive unit (GDU) with charge pump

优点：

Enhanced S12 architecture enabling sophisticated motor control algorithms A range of memory options to address multiple application needs and allow platform design Easy-to-use, reliable 4-byte erasable EEPROM No need for an external LIN physical layer device, saving space and simplifying design Protected low-side and high-side gate drivers capable of driving six external MOSFET up to 100 percent duty cycle

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