Pulse width and duty cycle

Hi,

Do the parameters pulse width and duty cycle on the datasheet of a device effectively mean the same data reperesented differently?

If yes, in that case am I right in assuming that a device for which the datasheet mentions a pulse of let's say 128 μsec can be used for pulse operation of 35 μsec with no problems?

Thanks.

you have to be a little more specific, does your device specify a minimum pulse width, datasheets don't mention a number, they provided specific parameter values.
Can you provide a link to a datasheet as an example?

Alex

Hi Alex,

Thanks for the reply. I've attached the datasheet (MRF6VP121KH) to this message as an example. The typical performance parameters of this device refer to a 128 usec. Is there any parameter to see if we can use this device safely for a lesser or higher pulse width?

Hope this clarifies the question a bit.

Thanks.

In the data sheet of the RF FET it is mentioned that you can use pulse length of 128 us at 10% duty cycle. This means the pulse repetition period should not be shorter than 10x 128 us= 1280 us. The full load of the transistor is only allowed to be 100W CW, or, pulsed, up to 1000W, so this high power can be only applied in pulses with 10% duty cycle, so only 100W average power.

Surely it can be used at 35us, in table4 it said it can have 32us ON and 18us OFF and 6.4% duty cycle. And look at in Fig.12.