Ids modeling of small signal HEMT
Could someone help me with implementing Ids in small signal model of HEMT using SDD component in ADS.
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Ids modeling is not easy as you suppose.There are few models on HEMT transistors and each model has its own approximation.
Because Ids is pretty nonlinear just after pinch-offf then continue linearly and then it arrives to saturation region.So, there are basically three zone and a simple equation can not represent these different zones precisely.
You should take a model as a reference and define the equation as you wish but it's quite hard sine you don't have expriences.
I know it is pretty hard. I just want to implement this equation using SDD component.
Ids = G*Vgs*exp(-jwt). With the circuit shown in my question it either throws an error saying a real value is expected at the SDD component or it doesn't seem to work as the output remains the same even though I change the Vgs. It would be of great help if you could just help write that equation for the SDD and how to go about the connection of it.