Adjust rise level of schottky diode rectifier

If we built rectifier using schottky diode, an input level for operation rise point is determined by forward voltage of diode.

So it is impossible to decrease an input level for operation rise point.

However, I want to increase an input level for operation rise point.
Is there any efficient way for this ?

I reject "Insert resistor or Series connected diode".

On the otherhand, If we use MOSFET as diode, we can adjust effective threshold level relative easily.

Adding a negative or a positive bias voltage to the anode of the diode, through a few kilo ohms resistor, can increase (neg. voltage) or decrease (pos. voltage) the rise point.

There is no battery.
And there is no resistor suitable for 1GHz operation.
So it is not so easy.

Sounds surprising at first sight. The thread seems to have unsaid presumptions that can't be expected considering state-of-the-art. I fear it's impossible to make suggestions without knowing the design constraints and what you want exactly to achieve.