[Moved]: How do I perform monte carlo simulation and MoSRA simultanously?
时间：03-25
整理：3721RD
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My file is below. I want to see the effect of aging on circuits with process variation. But I cannot append mosra and consider monte carlo sweep =3 (or any number) at the same time. Could yo please help me. Thanks
Also the manual says montecarlo works only with simmode=1 but fopr that I need to first use simmode=0 and generate redge file. The issue is that when I use simmode=0 to generate regde file, since it doesn't consider monte carlo the parameters do not change. So if I genersate redge file in this way and use it with monte carlo with simmode=1 I believe the results should not be right. Please help me.
Also the manual says montecarlo works only with simmode=1 but fopr that I need to first use simmode=0 and generate redge file. The issue is that when I use simmode=0 to generate regde file, since it doesn't consider monte carlo the parameters do not change. So if I genersate redge file in this way and use it with monte carlo with simmode=1 I believe the results should not be right. Please help me.
PHP Code:
.option post brief ingold=2 accurate
*.option seed=15
.op
.PARAM LMIN='50E-9'
.PARAM VDD_VALUE=1.1
.PARAM VDD_HALF=0.55
.OPTION BRIEF=1
.PARAM vth_pmos_pv=GAUSS(-0.3021,0.1,1)
.PARAM vth_nmos_pv=GAUSS(0.322,0.1,1)
.PARAM toxm_pmos_pv=GAUSS(1.26E-09,0.01,1)
.PARAM toxm_nmos_pv=GAUSS(1.14E-09,0.01,1)
.PARAM LMIN_pv=GAUSS(50E-09,0.1,3)
VSUPPLY VDD 0 VDD_VALUE
VSUPPLYGND GND 0 0
.TRAN 1000N 10000N SWEEP MONTE=3
.include '/HSPICE_SampleFiles/trans_model'
.temp 27
M_i_2 net_0 A2 ZN_neg GND NMOS_VTL_pv W=0.210000U L='LMIN_pv'
M_i_3 GND A1 net_0 GND NMOS_VTL_pv W=0.210000U L='LMIN_pv'
M_i_0 ZN ZN_neg GND GND NMOS_VTL_pv W=0.415000U L='LMIN_pv'
M_i_10 ZN_neg A1 VDD VDD PMOS_VTL_pv W=0.315000U L='LMIN_pv'
M_i_11 VDD A2 ZN_neg VDD PMOS_VTL_pv W=0.315000U L='LMIN_pv'
M_i_1 ZN ZN_neg VDD VDD PMOS_VTL_pv W=0.630000U L='LMIN_pv'
.model p1_ra mosra level=1 tit0 = 5e-7 titfd = 7.5e-10 tittd = 1.45e-20 tn = 0.25
.appendmodel p1_ra mosra PMOS_VTL_pv pmos
.mosra relmode=2 reltotaltime='117.1876531*30.41*24*3600' relstep='117.1876531*30.41*24*3600/4'
VIN_NODE_A1 A1 0 pulse(0 VDD_VALUE 5p 10p 10p 2993071.775p 5000000p)
VIN_NODE_A2 A2 0 pulse(0 VDD_VALUE 1p 10p 10p 3589472.35p 5000000p)
.MEASURE TRAN r_A1_OUT TRIG V(A1) VAL=VDD_HALF RISE=1 TARG V(ZN) VAL=VDD_HALF RISE=1
.MEASURE TRAN f_A1_OUT TRIG V(A1) VAL=VDD_HALF FALL=1 TARG V(ZN) VAL=VDD_HALF FALL=1
.END
I guess MOSRA and process variation cannot be simulated together: MOSRA needs much more parameter variation than process variation can offer.
So How I can evalute the nbti aging effects in Hspice for devices with variations?
Don't remember, sorry. There are a few threads about this problem in this forum; search for MOSRA or NBTI in this forum, and perhaps in G00GLE.
Check this thread: the 2 last posts.