MSP430F149的存储器结构及FLASH读写

KEY;

_DINT();

*ptr=0x30;

while(FCTL3&BUSY);

_EINT();

FCTL1=FWKEY;

FCTL3=FWKEY+LOCK;

4.2 向FLASH的InfoA中连续写入128B数据

说明：通过FCTL1将FLASH设为段擦除模式后，只要向某个段内任何存储单元写入0即可进行擦除操作。

void write_SegA (char value)

{

char *Flash_ptr; // Flash pointer

unsigned int i;

Flash_ptr = (char *) 0x1080; // Initialize Flash pointer

FCTL1 = FWKEY + ERASE; // Set Erase bit

FCTL3 = FWKEY; // Clear Lock bit

*Flash_ptr = 0; // Dummy write to erase Flash segment

FCTL1 = FWKEY + WRT; // Set WRT bit for write operation

for (i=0; i<128; i++)

{

*Flash_ptr++ = value; // Write value to flash

}

FCTL1 = FWKEY; // Clear WRT bit

FCTL3 = FWKEY + LOCK; // Set LOCK bit

}