S-Parameters for MOScaps
时间：04-06
整理：3721RD
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How should S-parameters be measured correctly for MOScaps on a VNA?
Since it's an nMOScap I need to bias the gate at 1V to create the channel in the device. When I did this the capacitance values still look like those measure with no bias.
I use a DC power supply and a T to connect the DC voltage to the VNA. I connect the ground terminal to the ground of the T which I'm assuming is the VNA ground.
Does anyone know whether the VNA sets the ports to the DC ground when running S-Parameter measurements or if they're left as DC floating? Should I be supplying the ground reference signal to the other terminal of the MOScap as well?
Help would be immensely appreciated.
Since it's an nMOScap I need to bias the gate at 1V to create the channel in the device. When I did this the capacitance values still look like those measure with no bias.
I use a DC power supply and a T to connect the DC voltage to the VNA. I connect the ground terminal to the ground of the T which I'm assuming is the VNA ground.
Does anyone know whether the VNA sets the ports to the DC ground when running S-Parameter measurements or if they're left as DC floating? Should I be supplying the ground reference signal to the other terminal of the MOScap as well?
Help would be immensely appreciated.