ATF-34143 ADS model to S2P file S parameter comparison in ADS
时间：04-05
整理：3721RD
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Hi
What I'm trying to do is create a bias network for avago ATF-34143 transistor model in ADS which matches the plotted S parameters of an S2P file to that of an ADS model of the transistor with a bias circuit. Bias at VDS=3 V, IDS=40 mA.
Both the model and the S2P file of the transistor are obtained from avago's website here:
http://www.avagotech.com/pages/en/rf...fet/atf-34143/
The S2P file I'm using is the f341433b.s2p - ATF-34143 s and noise parameters at 3 V, 40 mA (1 KB,S2P).
After doing this, the plots for the two simulations do not match. I have don't know why but it's probably the bias circuit I'm thinking.
I've attached some screenshots which should make things clearer.
All suggestions welcome, I am well and truely stuck. Thanks!
1-s-parameters are measured "Emitter/Source Grounded and Input and Output is terminated by 50 Ohm Characteristic Impedance"
**You used a series emitter resistance and it changes too much s-parameters.
**You have to use ideal RFC instead of Drain/Collector resistance.This R will truly change the s-parameters because it's shunted to termination impedance.
**And Gate/Base bias circuit is also not correct.You have to drive the transistor either a ideal current source for BJT or a ideal Voltage source with a RFC for FET.
What I'm trying to do is create a bias network for avago ATF-34143 transistor model in ADS which matches the plotted S parameters of an S2P file to that of an ADS model of the transistor with a bias circuit. Bias at VDS=3 V, IDS=40 mA.
Both the model and the S2P file of the transistor are obtained from avago's website here:
http://www.avagotech.com/pages/en/rf...fet/atf-34143/
The S2P file I'm using is the f341433b.s2p - ATF-34143 s and noise parameters at 3 V, 40 mA (1 KB,S2P).
After doing this, the plots for the two simulations do not match. I have don't know why but it's probably the bias circuit I'm thinking.
I've attached some screenshots which should make things clearer.
All suggestions welcome, I am well and truely stuck. Thanks!
The conditions are not same ...
1-s-parameters are measured "Emitter/Source Grounded and Input and Output is terminated by 50 Ohm Characteristic Impedance"
**You used a series emitter resistance and it changes too much s-parameters.
**You have to use ideal RFC instead of Drain/Collector resistance.This R will truly change the s-parameters because it's shunted to termination impedance.
**And Gate/Base bias circuit is also not correct.You have to drive the transistor either a ideal current source for BJT or a ideal Voltage source with a RFC for FET.
Makes much more sense now. Thanks so much!