[Moved]: Issue in TCAD sentaurus

Code C - [expand]
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Device tfet {
  Electrode {
    { name="Source"    Voltage=0.0 }
    { name="Drain"     Voltage=0.0 }
    { name="topgate"      Voltage=0.0 }
    { name="bottomgate" Voltage=0.0 }
  }
 
  File {
   Grid=   "@tdr@"
   Plot=   "@tdrdat@"
   Current="@plot@"
   Parameter= "@parameter@"
 }
 
Physics (Material="InAs") {
    Mobility (DopingDependence HighFieldSat Enormal)
    EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}
 
Physics (Material="GaSb") {
    Traps(
      (Acceptor Level Conc=7.25E+12 EnergyMid= 0.1 fromValBand)
        )
    Recombination (
            Band2Band
            (   
                Model = NonLocalPath
            )
 
    )
}
 
Physics (MaterialInterface="InAs/GaSb") {
    Charge(Uniform Conc = @INTQ@)
}
 
Physics
{
  Mobility ( DopingDependence)
    Recombination ( 
        SRH Auger Radiative
        Band2Band (
            Model= NonlocalPath
        )
    )
    EffectiveIntrinsicDensity( NoBandGapNarrowing )
    HeteroInterface
    Fermi
 
 
  }
 
}
 
Math {
  Method=Pardiso
  NotDamped=1000
  Iterations=20
  Extrapolate
  RelErrControl
  #directcurrentcomp
  #transient=BE
}   
 
 
Plot {
*- Carrier Densities:
    eDensity hDensity
    EffectiveIntrinsicDensity IntrinsicDensity
    eEquilibriumDensity hEquilibriumDensity
 
*- Currents and current components:
    Current/Vector eCurrent/Vector hCurrent/Vector
    eMobility hMobility eVelocity hVelocity
    
*- Fields, Potentials and Charge distributions
    ElectricField/Vector Potential SpaceCharge
    
*- Generation/Recombination
    SRHRecombination AugerRecombination RadiativeRecombination TotalRecombination   
    eLifeTime hLifeTime
 
*- Doping Profiles
    Doping DonorConcentration AcceptorConcentration
 
*- Band structure
    BandGap BandGapNarrowing ElectronAffinity
    ConductionBandEnergy ValenceBandEnergy
    eQuasiFermiEnergy hQuasiFermiEnergy
 
*- Band2Band Tunneling
    eBand2BandGeneration hBand2BandGeneration Band2BandGeneration
    SemiconductorGradConductionBand SemiconductorGradValenceBand
}
 
CurrentPlot {
    Band2BandGeneration(Integrate(Semiconductor))
    eBand2BandGeneration(Integrate(Semiconductor))
    hBand2BandGeneration(Integrate(Semiconductor))
    SRHRecombination( Integrate(Semiconductor)) 
    TotalRecombination( Integrate(Semiconductor))   
}
 
 
File {
      Output= "@log@"
}
 
System {
  tfet tfet1 (Drain=d Source=s topgate=tg bottomgate=bg)
  Vsource_pset vd ( d 0 ){ dc = 0 }
  Vsource_pset vs ( s 0 ){ dc = 0 }
  Vsource_pset vtg ( tg 0 ){ dc = 0 }
  Vsource_pset vbg ( bg 0 ){ dc = 0 }
}
 
Solve{
  NewCurrentFile="init_" 
  Poisson
  Coupled{ Poisson Electron Hole}
 
  Quasistationary(
     InitialStep= 0.1
     MaxStep= 0.5 Minstep= 1e-6
     Increment= 1.3
     Goal { parameter=vd.dc Voltage=0.3}
  ){ Coupled{ Poisson Electron hole} }
 
  NewCurrentFile="" 
  #-ramp gate:
  Quasistationary(
     InitialStep= 0.001 MaxStep= 0.005 Minstep= 1e-8
     Goal{ parameter=vtg.dc Voltage=0.3 }
     Plot { Range = (0 1) Intervals=10 })
  { Coupled{ Poisson Electron hole} }
 
Quasistationary(
     InitialStep= 0.001 MaxStep= 0.005 Minstep= 1e-8
     Goal{ parameter=vbg.dc Voltage=0.3 }
     Plot { Range = (0 1) Intervals=10 })
  { Coupled{ Poisson Electron hole} }
}