T厂PDK的阅读出现障碍，求助
时间：10-02
整理：3721RD
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T厂PDK文件中给出了mos器件的工艺角偏差会给出：vth_lin/vth_sat/vth_gm/Idlin/Idsat/Ioff/Isoff等，请问都是什么意思呀
小编来吧，传授一些经验
以.13um core NMOS为例：
Vthlin is extracted by sweep Vgs@ Id = 0.1uA*W/L, Vds = 0.05V;
Vthsat is extracted by sweep Vgs @ Id = 0.1uA*W/L, Vds = 1.2V;
Idlin is measured @ Vds = 0.05V, Vgs = 1.2V;
Idsat is measured @ Vds= Vgs = 1.2V;
Ioff is measured @ Vgs = 0, Vds = 1.2V...
多谢分享，vth-gm就是我们常用的量吧，在0.13um工艺下，vth-lin和vth-gm有没有很大的偏差呢?
多谢分享，
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