带隙基准问题 新手求助，求大神指导一下

电路与拉扎维书上的经典带隙基准（11.15）相似，只是没有采用两个BJT串联。调节电阻的大小，要么输出在1.25左右时，曲线不符合（负温度系数偏大），要么曲线吻合，输出电压高于1.3.。弄了好久了，一直不得其法，求大神指导，不胜感激

上图吧

The bandgap voltage is not always 1.25V.
The target of bandgap is to get a temp. independent voltage.
If your bandgap voltage is 1.3V, you can use a resistor divider to get 1.25V.
mpig

Correct…… silicon bandgap energy is 1.12eV，and a bandgap energy referenced BGR is 1.12V+a*Vpt (refer to razavi book), where a is process related. Just use the design when you get the best TC.