求助CMOS工艺中的电阻噪声

请问有人研究过CMOS工艺中的各种电阻（包括Nwell电阻、N+电阻、P+电阻、Poly电阻，高阻Poly电阻）的噪声吗?除了电阻热噪声外，是否还有其它噪声存在，例如flick noise。哪种电阻的噪声性能更好一些呢?求高人指点，欢迎大家讨论。

在热噪声面前，电阻的其他噪声都可不计。讨论这个没意义。

多晶硅里没有flick noise吗?还有P+，N+电阻，会不会有flick noise?工艺model中没有这些。但这些与Thermal noise相比是否可以忽略呢?

直接仿noise全都知道了

有flick noise，但是太小。都可以不计了。一般的model也不会有。

电阻模型里没有flick noise model。找到以下几篇文章，哪位大侠有下载资源帮忙下载一下呗。
谢谢！
[1] S.L.Jang, "A model of I/f noise in polysilicon resistors", Solid-State Electronics, Vo1.33, No.9, pp.1155-1162, 1990.
[2]O.Roux dit Buisson and G. Monn, "Flicker Noise Characterization of Polysilicon Resistors in Submicron CMOS Technologies", in proceedings of IEEE 1997 Int. Conference on Microelectronics Test Structures, Vol 10, March 1997.
[3]K.M. Chen, G.W. Huang, D.Y. Chiu, H.J. Huang and C.Y. Chang," Analysis of low-frequency noise in boron-doped polycrystalline silicon germanium resistors", Appl Phys Lett 81 (14) (2002), pp. 2578-2580.
[4]Brederlow, R.; Weber, W.; Dahl, C.; Schmitt-Landsiedel, D.; Thewes, R., "Low-frequency noise of integrated polysilicon resistors," Electron Devices, IEEE Transactions on , vol.48, no.6, pp.1180-1187, Jun 2001

电阻模型里没有flick noise model.找到几个paper,哪位大侠有资源帮忙下载一下呗。谢谢！
[1] S.L.Jang, "A model of I/f noise in polysilicon resistors", Solid-State Electronics, Vo1.33, No.9, pp.1155-1162, 1990.
[2]O.Roux dit Buisson and G. Monn, "Flicker Noise Characterization of Polysilicon Resistors in Submicron CMOS Technologies", in proceedings of IEEE 1997 Int. Conference on Microelectronics Test Structures, Vol 10, March 1997.
[3]K.M. Chen, G.W. Huang, D.Y. Chiu, H.J. Huang and C.Y. Chang," Analysis of low-frequency noise in boron-doped polycrystalline silicon germanium resistors", Appl Phys Lett 81 (14) (2002), pp. 2578-2580.
[4]Brederlow, R.; Weber, W.; Dahl, C.; Schmitt-Landsiedel, D.; Thewes, R., "Low-frequency noise of integrated polysilicon resistors," Electron Devices, IEEE Transactions on , vol.48, no.6, pp.1180-1187, Jun 2001

有人能帮忙下载一下上面的4篇Paper吗?谢谢！