用弱反型区设计LDO,设计方法？

怎么没人回帖?

降低电流，降低功耗的话，model知否准确? vth无法改变，而是vgs。整片wafer良率会低一些

Which device you want to bias into weak inversion? I doubt anybody would liket to bias his pass element of an LDO into weak inversion due to the high output impedance of the device.