ISE-TCAD不收敛问题
时间:03-15
整理:3721RD
点击:
各位大虾,我用mix-mode对一个PIN进行瞬态特性分析,衣架上温度模拟,就提示错误:JLIB_m_Log for value smaller then mindouble*1e10 called,不知道是不是不收敛,我的dessis代码如下,还请高手指点一下,不胜感激!
Device MODULATOR{
Thermode {
{ Name = "anode" Temperature = 300 }
{ Name = "cathode" Temperature = 300 }
}
Electrode {
{ Name = "anode"Voltage = 0.0 }
{ Name = "cathode"Voltage = 0.0 }
}
File {
Grid = "@grid@"
Doping = "@doping@"
Plot = "m"
Current = "m"
}
Physics {
Mobility(
DopingDep
HighFieldSaturation
CarrierCarrierScattering
)
Recombination(
SRH( DopingDependence )
surfaceSRH
Auger
)
Fermi
Hydrodynamic
}
}
Physics(MaterialInterface="Silicon/Oxide")
{ Traps(Donor Acceptor Level EnergyMid=0 fromMidBandGap
Conc=1e11 eXsection=1e-14 hXsection=1e-14)
}
System {
Vsource_pset v0 (n1 n0) { pwl = (0.0e+00 0
1.0e-9 0
1.001e-9 -1
2.0e-9 -1
2.001e-9 1
2.50e-9 1
2.501e-9 -1
5e-9 -1)}
MODULATOR modulator("anode"=n1 "cathode"=n0)
Set (n0 = 0)
Plot "nodes.plt" (time() n0 n1 )
}
File {
Current= "mod"
Output = "mod"
}
Plot {
eDensity hDensity eCurrent hCurrent
ElectricField eEnormal hEnormal
eQuasiFermi hQuasiFermi
Potential Doping SpaceCharge
DonorConcentration AcceptorConcentration
eTemperature hTemperature
}
CurrentPlot {
eDensity(
(-0.2 0)
(0 0)
(0.2 0)
(-0.2 0.1)
(0 0.1)
(0.2 0.1)
(-0.2 0.25)
(0 0.25)
(0.2 0.25)
)
hDensity(
(-0.2 0)
(0 0)
(0.2 0)
(-0.2 0.1)
(0 0.1)
(0.2 0.1)
(-0.2 0.25)
(0 0.25)
(0.2 0.25)
Average(Region="Region_4")
Maximum(Region="Region_4")
minimum(Region="Region_4")
)
}
CurrentPlot {
eDensity(Average(Region="Region_4")
Maximum(Region="Region_4")
minimum(Region="Region_4"))
}
Math {
Extrapolate
RelErrControl
Digits=4
Notdamped=50
Iterations=12
NoCheckTransientError
}
Solve {
#-build up initial solution
Coupled { Poisson }
Coupled { Poisson Electron Hole }
Coupled { Poisson Electron Hole Temperature}
Coupled { Poisson Electron Hole Temperature circuit}
Transient (
InitialTime=0 FinalTime=5e-9
InitialStep=5e-11 MaxStep=5e-10 MinStep=5e-17
Increment=1.3)
{Coupled { Poisson Electron Hole Temperature circuit}}
}
Device MODULATOR{
Thermode {
{ Name = "anode" Temperature = 300 }
{ Name = "cathode" Temperature = 300 }
}
Electrode {
{ Name = "anode"Voltage = 0.0 }
{ Name = "cathode"Voltage = 0.0 }
}
File {
Grid = "@grid@"
Doping = "@doping@"
Plot = "m"
Current = "m"
}
Physics {
Mobility(
DopingDep
HighFieldSaturation
CarrierCarrierScattering
)
Recombination(
SRH( DopingDependence )
surfaceSRH
Auger
)
Fermi
Hydrodynamic
}
}
Physics(MaterialInterface="Silicon/Oxide")
{ Traps(Donor Acceptor Level EnergyMid=0 fromMidBandGap
Conc=1e11 eXsection=1e-14 hXsection=1e-14)
}
System {
Vsource_pset v0 (n1 n0) { pwl = (0.0e+00 0
1.0e-9 0
1.001e-9 -1
2.0e-9 -1
2.001e-9 1
2.50e-9 1
2.501e-9 -1
5e-9 -1)}
MODULATOR modulator("anode"=n1 "cathode"=n0)
Set (n0 = 0)
Plot "nodes.plt" (time() n0 n1 )
}
File {
Current= "mod"
Output = "mod"
}
Plot {
eDensity hDensity eCurrent hCurrent
ElectricField eEnormal hEnormal
eQuasiFermi hQuasiFermi
Potential Doping SpaceCharge
DonorConcentration AcceptorConcentration
eTemperature hTemperature
}
CurrentPlot {
eDensity(
(-0.2 0)
(0 0)
(0.2 0)
(-0.2 0.1)
(0 0.1)
(0.2 0.1)
(-0.2 0.25)
(0 0.25)
(0.2 0.25)
)
hDensity(
(-0.2 0)
(0 0)
(0.2 0)
(-0.2 0.1)
(0 0.1)
(0.2 0.1)
(-0.2 0.25)
(0 0.25)
(0.2 0.25)
Average(Region="Region_4")
Maximum(Region="Region_4")
minimum(Region="Region_4")
)
}
CurrentPlot {
eDensity(Average(Region="Region_4")
Maximum(Region="Region_4")
minimum(Region="Region_4"))
}
Math {
Extrapolate
RelErrControl
Digits=4
Notdamped=50
Iterations=12
NoCheckTransientError
}
Solve {
#-build up initial solution
Coupled { Poisson }
Coupled { Poisson Electron Hole }
Coupled { Poisson Electron Hole Temperature}
Coupled { Poisson Electron Hole Temperature circuit}
Transient (
InitialTime=0 FinalTime=5e-9
InitialStep=5e-11 MaxStep=5e-10 MinStep=5e-17
Increment=1.3)
{Coupled { Poisson Electron Hole Temperature circuit}}
}
请问你的ISE TCAD是在哪里下的?能给我传一份吗?
我找了很久都没找到
我觉的这个软件很不好用。
相对来说, twb 或 silvaco 就好用太多了。
我的模拟也经常不收敛
太厉害了!
这个软件 最让人 头疼 的 就是收敛性 了
我也在找~
那里可以下?
TWB和silvaco的模拟没有这样准确~
路过,学习的
LZ仿的是PI二极管,问题解决了没?
打字出错了,应该是“LZ仿的是PIN二极管,问题解决了没?”