sentaurus 2013 sprocess deposit厚度过小出错？求解决
时间：03-15
整理：3721RD
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** Error **
Deposition operation fAIled ！
... aborting
terminate called after throwing an instance of 'std::logic_error'
what():TbStopwatch::stop must be called pair-wise with TbStopwatch::start.
started with id = 86(mgoals)
stopped with id = 12(deposit command)
** Error **
Internal error ！
... aborting
运行的是sentaurus 2013官方的CMOS工艺例子，每次deposit 1.4nm的oxide时就卡住，然后很长一段时间后就显示以上的错误。经过试验，淀积厚度增加到9nm以上的时候不会出错
Deposition operation fAIled ！
... aborting
terminate called after throwing an instance of 'std::logic_error'
what():TbStopwatch::stop must be called pair-wise with TbStopwatch::start.
started with id = 86(mgoals)
stopped with id = 12(deposit command)
** Error **
Internal error ！
... aborting
运行的是sentaurus 2013官方的CMOS工艺例子，每次deposit 1.4nm的oxide时就卡住，然后很长一段时间后就显示以上的错误。经过试验，淀积厚度增加到9nm以上的时候不会出错
现在先deposit然后etch曲线把这个错误绕过了。谁知道是怎么回事呢?
不知道