影响自举电路的5个因素
时间：10-02
整理：3721RD
点击：
1. Gate Charge required to enhance MGT
2. Iqbs - quiescent current for the high side driver circuitry
3. Currents within the level shifter of the control IC
4. MGT gate-source forward leakage current
5. Bootstrap capacitor leakage current
2. Iqbs - quiescent current for the high side driver circuitry
3. Currents within the level shifter of the control IC
4. MGT gate-source forward leakage current
5. Bootstrap capacitor leakage current
notice :第5点为电解电容时才需要考虑