路由器所应用的DDR2 DDR3 SDRAM,可替代HYNIX Etron Winbond
时间：10-02
整理：3721RD
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华芯（SinoChip)
华芯半导体公司是中国领先的存储器芯片设计研发和高端集成电路芯片封装测试企业。公司总部位于济南，下设西安华芯半导体有限公司（存储器研发中心）、SoC研发中心、山东华芯微电子科技有限公司（封装测试事业部），并在硅谷、慕尼黑和香港设立合作研发中心。2009年5月，公司成功收购德国奇梦达中国研发中心，自主研制大容量动态随机存储器（DRAM）芯片并成功量产销售；2011年公司研发出USB3.0超高速存储控制SoC芯片；同年，公司在济南建成高端集成电路封装测试生产线。华芯将持续加大研发创新力度，积极构建芯片设计、晶圆制造以及封装测试产业链，与中国集成电路产业共同成长。
华芯（SinoChip)
DDR2 & DDR3 SDRAM
512Mbit
x16 HXB18T512160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C FBGA-84
x16 HXB18T512160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C FBGA-84
x16 HXB18T512160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C FBGA-84
1Gbit
×8 HXB18T1G800AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-84
×8 HXB18T1G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×8 HXB18T1G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×16 HXB18T1G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
2Gbit
×4 HXB18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
×8 HXB18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
x16 HXB18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-84
×4 HXB18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×8 HXB18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
x16 HXB18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×4 HXB18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×8 HXB18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
x16 HXB18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
×4 HXI18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
×8 HXI18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
x16 HXI18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-84
×4 HXI18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
×8 HXI18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
x16 HXI18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-84
×4 HXI18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
×8 HXI18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
x16 HXI18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-84
DDR3 SDRAM
1Gbit
x8 HXB(I)15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 C TFBGA-78
x8 HXB(I)15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 C TFBGA-78
x8 HXB(I)15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 C TFBGA-78
x8 HXB(I)15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 C TFBGA-78
x8 HXI15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 I TFBGA-78
x8 HXI15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 I TFBGA-78
x8 HXI15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 I TFBGA-78
x8 HXI15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 I TFBGA-78
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
K4S640832N K4S641632N K4S280832K K4S281632K K4S2808320 K4S281632O K4S560432J
K4S560832J K4S561632J K4S560432N K4S560832N K4S561632N
K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J K4H560838J K4H561638J
K4H560438N K4H560838N K4H561638N K4H510438F K4H510838F
K4H511638F K4H510438G K4H510838G K4H511638G
K4T28163QO K4t*56163QI K4t*56163QN K4T51083QG K4T51163QG K4T51043QI K4T51083QI
K4T51163QI K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QFK4B1G0846E K4B1G1646E K4B2G0846E K4B2G1646E K4B2G0846E K4B2G1646E
W9816G6IB W9816G6IH W9864G2IH W9864G6IH W9864G6JH W9812G2IH W9812G2IB
W9812G6IH W9812G6JH W9825G2DB W9825G6EH W9825G6JH
W9464G6IH W9464G6JH W9412G6IH W9412G6JH W9412G2IB W9712G6JB W9712G8JB
华芯半导体公司是中国领先的存储器芯片设计研发和高端集成电路芯片封装测试企业。公司总部位于济南，下设西安华芯半导体有限公司（存储器研发中心）、SoC研发中心、山东华芯微电子科技有限公司（封装测试事业部），并在硅谷、慕尼黑和香港设立合作研发中心。2009年5月，公司成功收购德国奇梦达中国研发中心，自主研制大容量动态随机存储器（DRAM）芯片并成功量产销售；2011年公司研发出USB3.0超高速存储控制SoC芯片；同年，公司在济南建成高端集成电路封装测试生产线。华芯将持续加大研发创新力度，积极构建芯片设计、晶圆制造以及封装测试产业链，与中国集成电路产业共同成长。
华芯（SinoChip)
DDR2 & DDR3 SDRAM
512Mbit
x16 HXB18T512160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C FBGA-84
x16 HXB18T512160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C FBGA-84
x16 HXB18T512160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C FBGA-84
1Gbit
×8 HXB18T1G800AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-84
×8 HXB18T1G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×8 HXB18T1G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×16 HXB18T1G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
2Gbit
×4 HXB18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
×8 HXB18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
x16 HXB18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-84
×4 HXB18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×8 HXB18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
x16 HXB18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×4 HXB18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×8 HXB18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
x16 HXB18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
×4 HXI18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
×8 HXI18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
x16 HXI18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-84
×4 HXI18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
×8 HXI18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
x16 HXI18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-84
×4 HXI18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
×8 HXI18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
x16 HXI18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-84
DDR3 SDRAM
1Gbit
x8 HXB(I)15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 C TFBGA-78
x8 HXB(I)15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 C TFBGA-78
x8 HXB(I)15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 C TFBGA-78
x8 HXB(I)15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 C TFBGA-78
x8 HXI15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 I TFBGA-78
x8 HXI15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 I TFBGA-78
x8 HXI15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 I TFBGA-78
x8 HXI15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 I TFBGA-78
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
K4S640832N K4S641632N K4S280832K K4S281632K K4S2808320 K4S281632O K4S560432J
K4S560832J K4S561632J K4S560432N K4S560832N K4S561632N
K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J K4H560838J K4H561638J
K4H560438N K4H560838N K4H561638N K4H510438F K4H510838F
K4H511638F K4H510438G K4H510838G K4H511638G
K4T28163QO K4t*56163QI K4t*56163QN K4T51083QG K4T51163QG K4T51043QI K4T51083QI
K4T51163QI K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QFK4B1G0846E K4B1G1646E K4B2G0846E K4B2G1646E K4B2G0846E K4B2G1646E
W9816G6IB W9816G6IH W9864G2IH W9864G6IH W9864G6JH W9812G2IH W9812G2IB
W9812G6IH W9812G6JH W9825G2DB W9825G6EH W9825G6JH
W9464G6IH W9464G6JH W9412G6IH W9412G6JH W9412G2IB W9712G6JB W9712G8JB
这么多型号
这么多