微波EDA网,见证研发工程师的成长!
首页 > 研发问答 > 硬件电路设计 > 电子工程师杂谈 > SDRAM 华芯SDRAM DDR2 可替代Samsung、ISSI、Cypress HYNIX等料号

SDRAM 华芯SDRAM DDR2 可替代Samsung、ISSI、Cypress HYNIX等料号

时间:10-02 整理:3721RD 点击:
专业Memory IC供应商,正规一级代理,协助采购在价格、品质、交期做到最好。
可替代Lyontek、Samsung、ISSI、Cypress HYNIX  Etron Winbond SDRAM/DDR等产品。
如有需要请随时和我们联系.
我们原厂供货,价格&交期较有优势.
谢谢!
-----------------------------
Coco Lee(李女士)
Ramsun International Limited.
英尚国际有限公司
手机:13795330227
QQ:778240593
Skype:coco-ramsun
华芯(SinoChip)
DDR2 & DDR3 SDRAM
512Mbit
x16 HXB18T512160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C FBGA-84
x16 HXB18T512160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C FBGA-84
x16 HXB18T512160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C FBGA-84
1Gbit
×8 HXB18T1G800AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-84
×8 HXB18T1G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×8 HXB18T1G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×16 HXB18T1G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
2Gbit
×4 HXB18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
×8 HXB18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
x16 HXB18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-84
×4 HXB18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×8 HXB18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
x16 HXB18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×4 HXB18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×8 HXB18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
x16 HXB18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
×4 HXI18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
×8 HXI18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
x16 HXI18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-84
×4 HXI18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
×8 HXI18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
x16 HXI18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-84
×4 HXI18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
×8 HXI18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
x16 HXI18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-84
DDR3 SDRAM
1Gbit
x8 HXB(I)15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 C TFBGA-78
x8 HXB(I)15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 C TFBGA-78
x8 HXB(I)15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 C TFBGA-78
x8 HXB(I)15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 C TFBGA-78
x8 HXI15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 I TFBGA-78
x8 HXI15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 I TFBGA-78
x8 HXI15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 I TFBGA-78
x8 HXI15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 I TFBGA-78
可替代Lyontek、Samsung、ISSI、Cypress HYNIX  Etron Winbond SDRAM/DDR等产品。
K4S640832N     K4S641632N      K4S280832K      K4S281632K        K4S2808320     K4S281632O      K4S560432J
K4S560832J      K4S561632J      K4S560432N      K4S560832N       K4S561632N
K4H641638N     K4H641638Q      K4H281638L       K4H281638O      K4H560438J      K4H560838J     K4H561638J
K4H560438N     K4H560838N      K4H561638N       K4H510438F       K4H510838F     
K4H511638F     K4H510438G     K4H510838G      K4H511638G
K4T28163QO     K4t*56163QI     K4t*56163QN     K4T51083QG     K4T51163QG     K4T51043QI     K4T51083QI
K4T51163QI      K4T1G084QE     K4T1G164QE      K4T1G084QF     K4T1G164QFK4B1G0846E    K4B1G1646E     K4B2G0846E     K4B2G1646E     K4B2G0846E     K4B2G1646E
W9816G6IB     W9816G6IH     W9864G2IH     W9864G6IH     W9864G6JH     W9812G2IH     W9812G2IB
W9812G6IH     W9812G6JH     W9825G2DB     W9825G6EH     W9825G6JH
W9464G6IH     W9464G6JH      W9412G6IH      W9412G6JH      W9412G2IB     W9712G6JB         W9712G8JB
W9712G6JB     W9712G8JB      W9725G6JB      W9725G8JB      W9751G6JB   W9751G8JB       W971GG6JB     W971GG8JB      W972GG6JB      W972GG8JB



Copyright © 2017-2020 微波EDA网 版权所有

网站地图

Top