请教cadence spectre中flick noise如何仿真？

如题。我要设计一个低噪声的前置放大器，照着何乐年老师的方法用spectre 中的noise analysis 进行噪声仿真，我发现输出结果中：MOS管的噪声成分有id、rs、rd，电阻的噪声成分有rn、fn,且fn=0;从PSD看，即使我增大MOS尺寸上百倍，发现低频噪声近乎不变，仿真结果中似乎没有包含1/f噪声。我的问题是：
1、idrsrd 分别代表什么?
2、1/f噪声（flick noise）仿真到底应该如何仿真?是否不应该选noise analysis而改用其他， 抑或是还需添加其他噪声model?
烦请各位高人给个详细一点的知道，我再此感谢你们的无私奉献，谢谢！

碰到一样的问题，同问

同求~

期待高手出现啊

泥煤我也遇到 这个 问题了。

2500个看帖，4个同问回复，强问题！

有本模拟CMOS模拟集成电路设计与仿真那上面有些，具体记不清了

四年过去了 还是要同问...

不知道是不是您的仿真模型的问题。可以换一个工艺试试看

encounter the same problem when I design a pre amplifier with XFab SOI 1um process.
Co told me that I need to modify the model file, for examplenbth4.scsor pbth4.scs, with
noimod = 1------->noimod =2.
to enable the flicker noise simulation.

I have found something useful in cadence community.
http://www.cadence.com/Community/forums/p/25499/1321091.aspx
Noise Summary Example
For a MOS transistor, the individual noise contributors are fn, id, rs and rd.
-fn is the flicker noise
-id is the drain-source resistance thermal noise
-rs is the source parasitic thermal noise
-rd is the drain parasitic resistance thermal noise

For Bipolar transistor, the noise contributors are in rb, ib, rc, ic, fn, re,
and bn.
-rb is the base resistance thermal noise
-ib is the base current shot noise
-rc is the collector resistor thermal noise
-ic is the collector current shot noise
-fn is the flicker noise
-re is the emitter resistor thermal noise
-bn is the burst noise
-itfz is forward transport current
-ibe(A) Intrinisic B-E Junction Current
-kfn is B-E flicker noise constant
-afn is the B-E flicker niose exponent
-bfn is the B-E flicker noise dependence

For VBIC,(please also see Solution 11603018 )
- fn is the flicker noise between the node bi and ei.
- fnp is the flicker noise between the node bx and bp.
- fnx is the flicker noise between the node bx and ei.

好像不能解决问题

顶，不错

谢谢小编分享资料收下了

感谢各位的讨论

谢谢 很有用

感谢11楼的分享

那究竟该如何仿真呢?