比较器的backgating effect

我最近看文件，里面的比较器(如附图)提到一段：

In this latch the cross-coupled devices (M2A, M2B) and (M3A, M3B) are

strobed at their drains, rather than sources, to eliminate

backgating effects and promote faster regeneration

请问为何此架构比较器，backgating effects可以消除?

还有backgating effects是什么?

backgate通常是指MOS管的body端！backgating effects应该就是body effect！

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