华芯SDRAM DDR2 可替代Samsung、ISSI、Cypress HYNIX等料号
时间:10-02
整理:3721RD
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专业Memory IC供应商,正规一级代理,协助采购在价格、品质、交期做到最好。英尚国际是EMLSI中国区授权指定一级代理商,同时我们也是专业的静态随机存储器产品及RAM方案提供商.Ramsun is the authorized agent as designated by EMLSI.Also we're a professional supplier of the Satic Random Access Ram and RAM Solution.
公司主要产品有:
1.Low power SRAM (低功耗静态随机存储器)1Mbit-16Mbit.
2.Async Fast SRAM(异步高速SRAM)4Mbit-72Mbit.
3.Sync Fast SRAM(同步高速SRAM)4Mbit-16Mbit.
4.Serial SRAM(串行静态随机存储器)64Kbit-512Kbit.
3.PSRAM[Pseudo SRAM,UtRAM (虚拟静态随机存储器)4Mbit-64Mbit.
4.Cellular RAM(伪静态随机存储器)4Mbit-64Mbit.
6.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit-16Mbit
8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit-512Mbit
9.DDR2/DDR3 SDRAM (动态随机存储器)512Mbit-4Gbit
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
如有需要请随时和我们联系.
我们原厂供货,价格&交期较有优势.
谢谢!
-----------------------------
Coco Lee(李女士)
Ramsun International Limited.
英尚国际有限公司
手机:13795330227
QQ:778240593
Skype:coco-ramsun
华芯(SinoChip)
DDR2 & DDR3 SDRAM
512Mbit
x16 HXB18T512160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C FBGA-84
x16 HXB18T512160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C FBGA-84
x16 HXB18T512160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C FBGA-84
1Gbit
×8 HXB18T1G800AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-84
×8 HXB18T1G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×8 HXB18T1G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×16 HXB18T1G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
2Gbit
×4 HXB18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
×8 HXB18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
x16 HXB18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-84
×4 HXB18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×8 HXB18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
x16 HXB18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×4 HXB18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×8 HXB18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
x16 HXB18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
×4 HXI18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
×8 HXI18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
x16 HXI18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-84
×4 HXI18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
×8 HXI18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
x16 HXI18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-84
×4 HXI18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
×8 HXI18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
x16 HXI18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-84
DDR3 SDRAM
1Gbit
x8 HXB(I)15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 C TFBGA-78
x8 HXB(I)15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 C TFBGA-78
x8 HXB(I)15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 C TFBGA-78
x8 HXB(I)15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 C TFBGA-78
x8 HXI15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 I TFBGA-78
x8 HXI15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 I TFBGA-78
x8 HXI15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 I TFBGA-78
x8 HXI15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 I TFBGA-78
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
K4S640832N K4S641632N K4S280832K K4S281632K K4S2808320 K4S281632O K4S560432J
K4S560832J K4S561632J K4S560432N K4S560832N K4S561632N
K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J K4H560838J K4H561638J
K4H560438N K4H560838N K4H561638N K4H510438F K4H510838F
K4H511638F K4H510438G K4H510838G K4H511638G
K4T28163QO K4t*56163QI K4t*56163QN K4T51083QG K4T51163QG K4T51043QI K4T51083QI
K4T51163QI K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QFK4B1G0846E K4B1G1646E K4B2G0846E K4B2G1646E K4B2G0846E K4B2G1646E
W9816G6IB W9816G6IH W9864G2IH W9864G6IH W9864G6JH W9812G2IH W9812G2IB
W9812G6IH W9812G6JH W9825G2DB W9825G6EH W9825G6JH
W9464G6IH W9464G6JH W9412G6IH W9412G6JH W9412G2IB W9712G6JB W9712G8JB
W9712G6JB W9712G8JB W9725G6JB W9725G8JB W9751G6JB W9751G8JB W971GG6JB W971GG8JB W972GG6JB W972GG8JB
公司主要产品有:
1.Low power SRAM (低功耗静态随机存储器)1Mbit-16Mbit.
2.Async Fast SRAM(异步高速SRAM)4Mbit-72Mbit.
3.Sync Fast SRAM(同步高速SRAM)4Mbit-16Mbit.
4.Serial SRAM(串行静态随机存储器)64Kbit-512Kbit.
3.PSRAM[Pseudo SRAM,UtRAM (虚拟静态随机存储器)4Mbit-64Mbit.
4.Cellular RAM(伪静态随机存储器)4Mbit-64Mbit.
6.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit-16Mbit
8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit-512Mbit
9.DDR2/DDR3 SDRAM (动态随机存储器)512Mbit-4Gbit
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
如有需要请随时和我们联系.
我们原厂供货,价格&交期较有优势.
谢谢!
-----------------------------
Coco Lee(李女士)
Ramsun International Limited.
英尚国际有限公司
手机:13795330227
QQ:778240593
Skype:coco-ramsun
华芯(SinoChip)
DDR2 & DDR3 SDRAM
512Mbit
x16 HXB18T512160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C FBGA-84
x16 HXB18T512160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C FBGA-84
x16 HXB18T512160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C FBGA-84
1Gbit
×8 HXB18T1G800AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25E 1.8V DDR2-800E 6-6-6 400 C TFBGA-84
×8 HXB18T1G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×16 HXB18T1G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×8 HXB18T1G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×16 HXB18T1G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
2Gbit
×4 HXB18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
×8 HXB18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-60
x16 HXB18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 C TFBGA-84
×4 HXB18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
×8 HXB18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-60
x16 HXB18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 C TFBGA-84
×4 HXB18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
×8 HXB18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-60
x16 HXB18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 C TFBGA-84
×4 HXI18T2G400AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
×8 HXI18T2G800AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-60
x16 HXI18T2G160AF(L)-19F 1.8V DDR2-1066F 7-7-7 533 I TFBGA-84
×4 HXI18T2G400AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
×8 HXI18T2G800AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-60
x16 HXI18T2G160AF(L)-25D 1.8V DDR2-800D 5-5-5 400 I TFBGA-84
×4 HXI18T2G400AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
×8 HXI18T2G800AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-60
x16 HXI18T2G160AF(L)-3D 1.8V DDR2-667D 5-5-5 333 I TFBGA-84
DDR3 SDRAM
1Gbit
x8 HXB(I)15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 C TFBGA-78
x8 HXB(I)15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 C TFBGA-78
x8 HXB(I)15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 C TFBGA-78
x8 HXB(I)15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 C TFBGA-78
x8 HXI15H1G800AF–19F 1.5V DDR3–1066F 7–7–7 533 I TFBGA-78
x8 HXI15H1G800AF–19G 1.5V DDR3–1066G 8–8–8 533 I TFBGA-78
x8 HXI15H1G800AF–15G 1.5V DDR3–1333G 8–8–8 667 I TFBGA-78
x8 HXI15H1G800AF–15H 1.5V DDR3–1333H 9–9–9 667 I TFBGA-78
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
K4S640832N K4S641632N K4S280832K K4S281632K K4S2808320 K4S281632O K4S560432J
K4S560832J K4S561632J K4S560432N K4S560832N K4S561632N
K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J K4H560838J K4H561638J
K4H560438N K4H560838N K4H561638N K4H510438F K4H510838F
K4H511638F K4H510438G K4H510838G K4H511638G
K4T28163QO K4t*56163QI K4t*56163QN K4T51083QG K4T51163QG K4T51043QI K4T51083QI
K4T51163QI K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QFK4B1G0846E K4B1G1646E K4B2G0846E K4B2G1646E K4B2G0846E K4B2G1646E
W9816G6IB W9816G6IH W9864G2IH W9864G6IH W9864G6JH W9812G2IH W9812G2IB
W9812G6IH W9812G6JH W9825G2DB W9825G6EH W9825G6JH
W9464G6IH W9464G6JH W9412G6IH W9412G6JH W9412G2IB W9712G6JB W9712G8JB
W9712G6JB W9712G8JB W9725G6JB W9725G8JB W9751G6JB W9751G8JB W971GG6JB W971GG8JB W972GG6JB W972GG8JB
可替代Lyontek、Samsung、ISSI、Cypress HYNIX Etron Winbond SDRAM/DDR等产品。
K4S640832N K4S641632N K4S280832K K4S281632K K4S2808320 K4S281632O K4S560432J
K4S560832J K4S561632J K4S560432N K4S560832N K4S561632N
K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J K4H560838J K4H561638J
K4H560438N K4H560838N K4H561638N K4H510438F K4H510838F