请教MEDICI问题

MEDICI输出的out文件里有自动生成的电导（如：g（gate，source））和电容（如：c(gate，source)），这些是什么电容和电导，包括本征的和寄生的，还是仅仅是本征的?知道的告小弟我一下，谢谢！

intrinsic unless you do spice in medici

谢谢，再请教一下，那求总电容（intrinsic+extrinsic）用什么语句呢?麻烦了，非常感谢！

总电容 of the circuit or just a device?
Let me know your case & require.

就是求一个普通MOS管的栅源栅漏的总电容（包括交叠电容和边缘场电容），MEDICI可能跑出来交叠电容?还有就是源漏电阻（源结+漏结+沟道），用什么语句?（总电阻用extract name=R express="@V(Drain)/@I(Drain)" 表达式可行?还是用extract name=R express=“1/g(Drain,source)”?）小弟还是个菜鸟，谢谢赐教，感激不尽！

You are welcome
It seems to me that you wanna a MOSFET
Do not understand 栅源栅漏的总电容 your mentioned, please specify it in English.
What it sounds like to me is your would like to simulate the gate capacitance + field capacitance.
The later one (i.e. 边缘场电容) require the definition the environment condition - air, which is excluded in the expression of "@V(Drain)/@I(Drain)".It is straightforward.
However, the trick thing is your device structure.MEDICI is very likely to give you weird value if it is not tuned precisely.
Also error might occur to your expression " extract name=R express="@V(Drain)/@I(Drain) ", which might be better to be changed into
extract name=Rds express="@V(Drain)/@I(Drain) cond="@I(drain)>0"
Enjoy it.Let me know if your have any further hesitate.ukinfo@in.com

Thanks for your help.Wish you have a good life！

想请教一下在仿真双极性晶体管时，电路模型已经导入程序中，最后要画图，如果要求解在某一时刻的温度分布，电场强度分布和电流密度分布程序该如何写?

请问小编用过medici的电路仿真功能吗?我有个电路仿真的问题想请教您。怎么将例子medex17（HEMT管子）做成一个模型，然后将其用于电路仿真中?我尝试过SAVE MESH OUT.FILE=HEMT W.MODELSHEMT1 1=1 2=3 0=2 0=4 FILE=HEMT

结果报错 HEMT unknown circuit parameter。
您有没有好的办法呢?谢谢您！

有，不“十分”复杂的电路，200 node以下的
你的问题是输出的文档 hemt 没有正确导入。这个问题简单，只要按照例子或者user guild上正确解答，就没有问题的。

接下来的问题是，你的GaN Hemt的电路中convergence问题，这要花点心思才能解决。