LDMOS简单失效检测方法
时间:10-02
整理:3721RD
点击:
1) 测S-G和D-G极之间的正向电阻,正常为M/kOhm级别;否则低于几kOhm
2) Source-Gate connection is the same as Si PN Junction (+0.7V)
+Lead of MultiMeter connect to Source
- Lead to Gate
Source -Drain connection has about 0.55V barrier;(not sure)
3) 上电顺序,Vds-->Vgs-->RF (not necessary)
谢谢分享