关于锗的SILVACO仿真程序
时间：10-02
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关于锗的SILVACO仿真程序
为什我将下面的硅换成锗之后，程序就一直停留在solve vdrain=0.05，只有将其值改为0，并将后一句删除才会有输出，但输出并不好。求一个关于锗的SILVACO仿真程序
go atlas
TITLE SOI device simulation
# SILVACO International 1992, 1993, 1994, 1995, 1996
#
# 0.2um of silicon on 0.4um oxide substrate
#
mesh space.mult=1.0
#
x.mesh loc=0.00 spac=0.50
x.mesh loc=1.15 spac=0.02
x.mesh loc=1.5 spac=0.1
x.mesh loc=1.85 spac=0.02
x.mesh loc=3 spac=0.5
#
y.mesh loc=-0.017 spac=0.02
y.mesh loc=0.00 spac=0.005
y.mesh loc=0.1 spac=0.02
y.mesh loc=0.2 spac=0.01
y.mesh loc=0.6 spac=0.25
#
region num=1 y.max=0 oxide
region num=2 y.min=0 y.max=0.2 silicon
region num=3 y.min=0.2 oxide
#
#*********** define the electrodes ************
# #1-GATE #2-SOURCE #3-DRAIN #4-SUBSTRATE(below oxide)
#
electrode name=gate x.min=1 x.max=2 y.min=-0.017 y.max=-0.017
electrode name=source x.max=0.5 y.min=0 y.max=0
electrode name=drain x.min=2.5 y.min=0 y.max=0
electrode substrate
#
#*********** define the doping concentrations *****
#
doping uniform conc=2e17 p.type reg=2
doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.r=1.0
doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.l=2.0
save outf=soiex01_0.str
tonyplot soiex01_0.str -set soiex01_0.set
#
# set interface charge separately on front and back oxide interfaces
interf qf=3e10 y.max=0.1
interf qf=1e11 y.min=0.1
#
# set workfunction of gate
contact name=gate n.poly
#
# select models
models conmob srh auger bgn fldmob print
#
solve init
#
# do IDVG characteristic
#
method newton trap
solve prev
solve vgate=-0.2
solve vdrain=0.05
solve vdrain=0.1
#
# ramp gate voltage
log outf=soiex01_1.log master
solve vgate=0.1 vstep=0.1 name=gate vfinal=1.5
#
# plot resultant IDVG threshold voltage curve
tonyplot soiex01_1.log -set soiex01_1.set
#
# plot resultant IDVG subthreshold slope curve
tonyplot soiex01_1.log -set soiex01_2.set
#
#
extract name="subvt" \
1.0/slope(maxslope(curve(v."gate",log10(abs(i."drain")))))
#
#
extract name="vt" (xintercept(maxslope(curve(v."gate",abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
#
quit
为什我将下面的硅换成锗之后，程序就一直停留在solve vdrain=0.05，只有将其值改为0，并将后一句删除才会有输出，但输出并不好。求一个关于锗的SILVACO仿真程序
go atlas
TITLE SOI device simulation
# SILVACO International 1992, 1993, 1994, 1995, 1996
#
# 0.2um of silicon on 0.4um oxide substrate
#
mesh space.mult=1.0
#
x.mesh loc=0.00 spac=0.50
x.mesh loc=1.15 spac=0.02
x.mesh loc=1.5 spac=0.1
x.mesh loc=1.85 spac=0.02
x.mesh loc=3 spac=0.5
#
y.mesh loc=-0.017 spac=0.02
y.mesh loc=0.00 spac=0.005
y.mesh loc=0.1 spac=0.02
y.mesh loc=0.2 spac=0.01
y.mesh loc=0.6 spac=0.25
#
region num=1 y.max=0 oxide
region num=2 y.min=0 y.max=0.2 silicon
region num=3 y.min=0.2 oxide
#
#*********** define the electrodes ************
# #1-GATE #2-SOURCE #3-DRAIN #4-SUBSTRATE(below oxide)
#
electrode name=gate x.min=1 x.max=2 y.min=-0.017 y.max=-0.017
electrode name=source x.max=0.5 y.min=0 y.max=0
electrode name=drain x.min=2.5 y.min=0 y.max=0
electrode substrate
#
#*********** define the doping concentrations *****
#
doping uniform conc=2e17 p.type reg=2
doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.r=1.0
doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.l=2.0
save outf=soiex01_0.str
tonyplot soiex01_0.str -set soiex01_0.set
#
# set interface charge separately on front and back oxide interfaces
interf qf=3e10 y.max=0.1
interf qf=1e11 y.min=0.1
#
# set workfunction of gate
contact name=gate n.poly
#
# select models
models conmob srh auger bgn fldmob print
#
solve init
#
# do IDVG characteristic
#
method newton trap
solve prev
solve vgate=-0.2
solve vdrain=0.05
solve vdrain=0.1
#
# ramp gate voltage
log outf=soiex01_1.log master
solve vgate=0.1 vstep=0.1 name=gate vfinal=1.5
#
# plot resultant IDVG threshold voltage curve
tonyplot soiex01_1.log -set soiex01_1.set
#
# plot resultant IDVG subthreshold slope curve
tonyplot soiex01_1.log -set soiex01_2.set
#
#
extract name="subvt" \
1.0/slope(maxslope(curve(v."gate",log10(abs(i."drain")))))
#
#
extract name="vt" (xintercept(maxslope(curve(v."gate",abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
#
quit